Accelerate Advanced Material Innovation with NANOFABRICATOR™ LITE

NANOFABRICATOR™ LITE

Discover the most versatile & powerful tool ever created to accelerate advanced material innovation, rapid process testing & device development with atomic precision. Experience the unprecedented flexibility & material versatility!

Up to 2 Materials simultaneously

Down to 100 µm Line Width

Sample size up to 100 mm

Deposition speed up to 200 mm/s

Nanofabricator™ Lite

Rapid, flexible & versatile atomically precise processing

Line Width

400 µm now, 25 µm in development, 1 µm long term goal

Temperature

Operates in a temperature range from room temperature (RT) up to 300°C

Process speed

Variable from 0.1 mm/s up to 100 mm/s (based on sample and process specifications)

Versatile Materials Platform

Possible to process several materials sequentially out of 150* possible.

Environment

Open atmospheric conditions or within controlled ambient environments

Hybrid processing

Direct additive and subtractive processing

Selective Area Deposition

Path-defined processing for targeted deposition of materials

Surface geometry

Conformal deposition on any type of surface with corrugation up to 25 µm

Multimaterial stack printing

Multiple materials can be deposited sequentially

Crystalline Material

Growth High quality material deposition

Selective nanoparticle deposition

Tested with platinum (Pt) processes

Hollow microstructuring

Post process hollow structure development

DALP^® Technology

REDEFINING MICROFABRICATION

We enable on-demand next-generation microdevices printing on simple and complex surfaces atom-by-atom. The NANOFABRICATOR™ LITE is the most compact tool ever created to accelerate materials, processes and device innovation with atomic precision.

It is suitable for a wide range of applications such as MEMS, devices, optics, photonics, packaging, RF & electronics and quantum devices which can be developed with ATLANT 3D technology with previously impossible functionality and speed at a fraction of a cost.

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HOW WE DO IT

SIMPLIFYING THE WHOLE PROCESS

The whole process from experiment design to obtaining samples can take hours with several various DOE parameters. The processed sample has completed DOE with multiple parameter variations including thicknesses, temperatures, and materials.

PREPARING DIGITAL PATTERN FILE

This step involves creating a detailed digital blueprint of the desired pattern. It requires precise design work to ensure that the specifications of the pattern are accurately represented and ready for processing.

DEFINING DOE PROCESS FLOW AND FILES

In this phase, a systematic approach is taken to plan the experiment. It includes defining the process parameters and conditions, setting up the necessary files, and ensuring that all variables are considered for a successful outcome.

UPLOADING BLANK SUBSTRATE

Here, a blank substrate is loaded into the NANOFABRICATOR™ LITE. This substrate serves as the base material on which the processing will be carried out, according to the predefined digital pattern and DOE parameters.

DIRECT ATOMIC LAYER PROCESSING

This step signifies the completion of the processing phase. The substrate, now imprinted with the desired pattern through the Nanofabricator’s precise atomic layer processing, is ready for inspection and further use.

PROCESSED SAMPLE COMPLETED

This final stage involves the core technology of the NANOFABRICATOR™ LITE. It precisely adds or removes material at an atomic scale, following the digital pattern and DOE guidelines, to create the final micro- or nano-structured sample.

Expanding Horizons

Diverse Advanced Applications

The NANOFABRICATOR™ LITE enables advanced material innovation, rapid process testing, and device development across multiple advanced applications. It exemplifies a paradigm shift across diverse industrial landscapes. Explore how our cutting-edge equipment is advancing industries by offering precision, efficiency, and versatility in nanofabrication.

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Nanofabricator™ LITE

Technical Specification

ELEMENT

PARAMETERS

Substrate

Size: up to 4″ (100mm)
Substrate Handling: Wafer
Maximum thickness: 10 mm
Z direction shape: Flat
Holding method: Vacuum
Loading: Manual
Heater temperature: max. 300°C
Heater temp. uniformity: +/- 1%

Process Chamber

Environment: Ambient**** Uncontrolled
Processing speed*: up to 200 mm/sec
Deposition area: up to 1.5 mm from wafer edge
DALP^® resolution: 400 μm standard

Gas system

Precursor temperature: RT – 150°C
Nr. of precursor bubblers: 2**
Nr. of reactant bubblers: 1** (H2O***)
Nr. of gas reactants: 1**

Options

Environment: Inert***** Controlled
Additional precursor bubblers: **
Additional reactant bubblers: **
Additional gas reactants: **

* Dependent on materials to be deposited and customer needs.

** Additional number of bubblers and reactants dependent on customer needs.

*** Additional reactant types dependent on customer needs.

**** Clean room, CLASS 8 min recommended.

***** Argon recommended.